參數(shù)資料
型號(hào): AP25N10GP-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 100K
代理商: AP25N10GP-HF
AP25N10GS/P-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
Q
VG
10V
QGS
QGD
QG
Charge
1
10
100
1000
10000
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
5
10
15
20
25
024
68
10
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =25
o C
V DS =5V
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =48 V
V DS =64 V
V DS =80 V
I D =16 A
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
DUTY=0.5
SINGLE PULSE
0.2
T j =150
o C
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