參數(shù)資料
型號: AP2606AGY-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6
文件頁數(shù): 1/4頁
文件大?。?/td> 95K
代理商: AP2606AGY-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Fast Switching Characteristic
BVDSS
30V
▼ Lower Gate Charge
RDS(ON)
28mΩ
▼ Small Footprint & Low Profile Package
ID
7A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
/W
Data and specifications subject to change without notice
Operating Junction Temperature Range
-55 to 150
201009022
Thermal Data
Parameter
1
Storage Temperature Range
Continuous Drain Current
3, V
GS @ 10V
5.6
Pulsed Drain Current
1
20
Total Power Dissipation
2
-55 to 150
Gate-Source Voltage
+20
Continuous Drain Current
3, V
GS @ 10V
7
Parameter
Rating
Drain-Source Voltage
30
AP2606AGY-HF
Halogen-Free Product
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial applications.
D
G
S
SOT-26
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