參數(shù)資料
型號： AP25N10GJ-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 3/4頁
文件大?。?/td> 100K
代理商： AP25N10GJ-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP25N10GH/J-HF
0
10
20
30
40
50
02
46
8
10
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
9 .0V
8 .0V
7. 0V
V G = 5 .0V
0
10
20
30
40
02
46
8
10
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
10V
9 .0V
8 .0V
7. 0V
V G = 5 .0V
50
70
90
110
130
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =12 A
T C =25
o C
0.4
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =16A
V G =10V
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.3
0.7
1.1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相關PDF資料
PDF描述
AP25N10GH-HF 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP25N10GP-HF 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP25N10GS-HF 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP25P15GI 23 A, 140 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP2606AGY-HF 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
AP25N10GP-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP25N10GS-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP25P15GI 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP25P15GS-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP25SD 功能描述:整流器/與可變電容器 125Volts 1.0pF -23pF RoHS:否 制造商:Xicon 電容范圍:2.8 pF to 12.5 pF 容差: 電壓額定值:200 V 工作溫度范圍:- 35 C to + 85 C 端接類型:SMD/SMT 產品:Trimmer Capacitors - Ceramic Dielectric
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