參數(shù)資料
型號: AP2328GN-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 4 A, 30 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 4/4頁
文件大?。?/td> 94K
代理商: AP2328GN-HF
AP2328GN-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Circuit
4
0
100
200
300
400
500
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
02
46
8
10
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =3A
V DS =15V
Q
VG
4.5V
QGS
QGD
QG
Charge
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
t
T
0.02
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
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