參數(shù)資料
型號(hào): AP2530GY-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類(lèi): JFETs
英文描述: 30 V, 0.072 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 85K
代理商: AP2530GY-HF
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Low Gate Charge
N-CH BVDSS
30V
▼ Low On-resistance
RDS(ON)
72mΩ
▼ Surface Mount Package
ID
3.3A
▼ RoHS Compliant & Halogen-Free
P-CH
BVDSS
-30V
RDS(ON)
150mΩ
Description
ID
-2.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
3.3
-2.3
A
ID@TA=70℃
Continuous Drain Current
3
2.6
-1.8
A
IDM
Pulsed Drain Current
1
10
-10
A
PD@TA=25℃
Total Power Dissipation
1.14
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
110
℃/W
Data and specifications subject to change without notice
201003263
Parameter
1
AP2530GY-HF
Halogen-Free Product
G2
D2
S2
G1
D1
S1
D1
S1
G1
S2
G2
D2
SOT-26
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial-industrial
applications.
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