參數(shù)資料
型號： AP18P10GS
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, TO-263, 3 PIN
文件頁數(shù)： 3/5頁
文件大?。?/td> 135K
代理商： AP18P10GS
AP18P10GS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
120
150
180
210
240
270
300
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-8 A
T C =25 ℃
0
10
20
30
40
04
8
12
16
20
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -12 A
V G = -10V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
5
10
15
20
02
46
8
10
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0V
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