參數(shù)資料
型號(hào)： AP18P10GS
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, TO-263, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 135K
代理商： AP18P10GS
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-100V
▼ Simple Drive Requirement
RDS(ON)
160mΩ
▼ Fast Switching Characteristic
ID
-12A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
mJ
IAR
A
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-55 to 150
Linear Derating Factor
35.7
-55 to 150
40
-9
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Avalanche Current
Single Pulse Avalanche Energy
2
Continuous Drain Current, VGS @ 10V
-10
Pulsed Drain Current
1
-48
201018072-1/4
AP18P10GS
Rating
-100
±20
-12
0.29
RoHS-compliant Product
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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