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參數(shù)資料
| 型號： | AP18N20GH-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 99K |
| 代理商： | AP18N20GH-HF |
AP18N20GH/J-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =8A
V GS =10V
0
10
20
30
40
0
4
8
12
16
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
16V
12V
10V
8.0V
V G = 6 .0V
0
10
20
30
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
0
2
4
6
8
10
12
14
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
16V
12V
10V
8.0V
V G = 6 .0V
120
200
280
360
440
520
600
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =5A
T C =25
o C
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