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參數(shù)資料
| 型號(hào)： | AP15P10GJ-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | AP15P10GJ-HF |
AP15P10GH/J-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
Q
VG
-10V
QGS
QGD
QG
Charge
0.1
1
10
100
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
100us
1ms
10ms
100ms
DC
T C =25
o C
Single Pulse
0
2
4
6
8
10
12
0
1020
3040
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -9A
V DS = -80V
10
100
1000
10000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
02468
-V GS , Gate-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =-5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this area
limited by RDS(ON)
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP15P10GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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