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參數(shù)資料
| 型號： | AP15P10GJ-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 100K |
| 代理商： | AP15P10GJ-HF |
AP15P10GH/J-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
0
5
10
15
20
25
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = - 3 .0V
0
10
20
30
0
5
10
15
20
25
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = - 3 .0V
150
250
350
450
550
246
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-6 A
T C =25 ℃
0.4
0.9
1.4
1.9
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =-6 A
V G = - 10V
0.3
0.7
1.1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
2
4
6
8
10
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP15P10GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP15P15GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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