參數(shù)資料
型號(hào): AP0903GYT-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 16 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 95K
代理商: AP0903GYT-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Good Thermal Dissipation
RDS(ON)
9mΩ
▼ Low On-resistance
ID
16A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
35
/W
Data & specifications subject to change without notice
AP0903GYT-HF
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
+20
Continuous Drain Current
3
16
13
Total Power Dissipation
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
1
3.5
201009214
-55 to 150
Pulsed Drain Current
1
40
Continuous Drain Current
3
-55 to 150
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
3x3 package is special for DC-DC converters application
and low 1.0mm profile with backside heat sink.
D
S
G
PMPAK
3x3
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