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參數(shù)資料
| 型號(hào)： | AP1001BSQ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN AND LEAD FREE, GREENFET PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 106K |
| 代理商： | AP1001BSQ |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lead-Free Package
BVDSS
25V
▼ Low Conductance Loss
RDS(ON)
6mΩ
▼ Low Profile ( < 0.7mm )
ID
15A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=100℃
A
ID@TC=25℃
A
IDM
A
PD@TA=25℃
W
PD@TA=70℃
W
PD@TC=25℃
W
EAS
mJ
IAR
A
TSTG
℃
TJ
℃
Rthj-c
Maximum Thermal Resistance, Junction-
case
4
3.7
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
58
℃
/W
Data and specifications subject to change without notice
Continuous Drain Current, VGS @ 10V
4
-40 to 150
Halogen-Free Product
Single Pulse Avalanche Energy
5
Operating Junction Temperature Range
Total Power Dissipation
4
Avalanche Current
Continuous Drain Current, VGS @ 10V
3
12
Pulsed Drain Current
1
120
Total Power Dissipation
3
Thermal Data
Storage Temperature Range
24
Total Power Dissipation
3
1.4
34
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
15
Parameter
Rating
Drain-Source Voltage
25
AP1001BSQ
59
28.8
2.2
-40 to 150
201006032
1
G
D
S
The AP1001BSQ used the latest APEC Power MOSFET silicon
technology with the advanced technology packaging to provide the
lowest on-resistance loss, low profile and dual sided cooling
compatible.
The GreenFET
TM package is compatible with existing soldering
techniques and is ideal for power application, especially for high
frequency / high efficiency DC-DC converters.
GreenFET
TM
SQ
G
D
S
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