參數(shù)資料
型號(hào): AP04N70BI-H
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 106K
代理商: AP04N70BI-H
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
700V
▼ Fast Switching Characteristic
RDS(ON)
2.4Ω
▼ Simple Drive Requirement
ID
4A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.8
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
/W
Data & specifications subject to change without notice
200906254
Parameter
15
33
Linear Derating Factor
0.26
1
+30
4
2.5
Storage Temperature Range
-55 to 150
4
-55 to 150
Parameter
AP04N70BI-H
8
Rating
700
RoHS-compliant Product
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220CFM(I)
The TO-220CFM package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies, DC-
AC converters and high current high speed switching circuits.
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