參數(shù)資料
型號(hào): AP05N50H
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 59K
代理商: AP05N50H
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
500V
▼ Fast Switching Characteristic
RDS(ON)
1.4Ω
▼ Simple Drive Requirement
ID
5.0A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
PD@TA=25℃
Total Power Dissipation
4
W
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.7
℃/W
Rthj-a
62.5
℃/W
Data & specifications subject to change without notice
Storage Temperature Range
-55 to 150
1
Parameter
201008092
2
Parameter
Linear Derating Factor
AP05N50H
+20
Rating
500
RoHS-compliant Product
5.0
18
73.5
3
2.8
45
0.59
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
G
D
S
The AP05N50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications.
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