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參數(shù)資料
| 型號： | AP02N70EJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 1.6 A, 700 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 108K |
| 代理商： | AP02N70EJ |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP02N70EJ
0
1
2
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
9.0V
8.0V
7.0V
V G =6.0V
0
1
2
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
9.0V
8.0V
7.0V
V G =6.0V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature ( ℃ )
N
o
rmalize
d
R
DS(ON)
I D =0.8A
V G =10V
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
Tj , Junction Temperature ( ℃ )
N
o
rmalize
d
BV
DSS
(V
)
0.7
0.8
0.9
1.0
1.1
1.2
-50
-25
0
25
50
75
100
125
150
T j , Junction Temperature ( ℃ )
N
o
rmalize
d
V
GS(t
h)
(V
)
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