- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51257 > AP02N70EJ (ADVANCED POWER ELECTRONICS CORP) 1.6 A, 700 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PDF資料下載
參數(shù)資料
| 型號： | AP02N70EJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 1.6 A, 700 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 108K |
| 代理商： | AP02N70EJ |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
700
-
V
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=10V, ID=0.8A
-
7
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.8A
-
0.65
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=480V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±10
uA
Qg
Total Gate Charge
3
ID=0.8A
-
17
30
nC
Qgs
Gate-Source Charge
VDS=560V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11
-
nC
td(on)
Turn-on Delay Time
3
VDD=350V
-
10
-
ns
tr
Rise Time
ID=0.8A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=4.7Ω,VGS=10V
-
21
-
ns
tf
Fall Time
RD=438Ω
-15
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
300
pF
Coss
Output Capacitance
VDS=25V
-
30
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
IS=1.6A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=1.6A, VGS=0V,
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
2550
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP02N70EJ
相關PDF資料 |
PDF描述 |
|---|---|
| AP03N40J-HF | 2.1 A, 400 V, 3.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP03N70J-A-HF | 3.3 A, 650 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP03N70H-A-HF | 3.3 A, 650 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP0420NA | 15 mA, 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AP0440NA | 15 mA, 400 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP02N90H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N90H-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N90I | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N90J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N90J-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。