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參數(shù)資料
| 型號： | AP025R6-00 |
| 廠商： | SKYWORKS SOLUTIONS INC |
| 元件分類： | 開關(guān) |
| 英文描述： | 23000 MHz - 26000 MHz RF/MICROWAVE TRANSFER SWITCH, 2.3 dB INSERTION LOSS |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 491K |
| 代理商： | AP025R6-00 |
Skyworks Solutions, Inc. [781] 376-3000
Fax [781] 376-3100 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 12/02A
23–26 GHz GaAs MMIC
6 Port Reflective PIN Switch
Features
■ Low Loss
■ Excellent Return Loss
■ Fast Switching Speed
■ High Power Handling
Chip Outline
AP025R6-00
Description
Skyworks’ 6 port PIN diode switch is a robust, high
performance switch which allows signal routing between
any two RF ports. It is ideal for low loss, high isolation
applications, particularly where high power handling is
required. The chip uses Skyworks’ proven PIN diode
technology, and is based upon MBE layers for the highest
uniformity and repeatability. The diodes employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate an epoxy die attach process. The
GaAs MMIC employs a shunt PIN diode in each arm and
an on-chip bias network. Chips are measured on a 100%
basis for DC diode breakdown voltage, turn-on voltage and
RF parameters on selected paths.
Parameter
Condition
Symbol
Min.
Typ.2
Max.
Unit
Insertion Loss
F = 23–26 GHz
IL
1.5
2.3
dB
Isolation
F = 23–26 GHz
Iso
28
30
dB
Input Return Loss
F = 23–26 GHz
RLI
10
15
dB
Output Return Loss
F = 23–26 GHz
RLO
10
15
dB
Breakdown Voltage
IR = 10 AVBR
20
60
V
Forward Voltage
IF = 10 mA
VF
0.9
1.25
1.3
V
Switching Speed1
2ns
Output Power at 1 dB Compression1
F = 23–26 GHz
P1 dB
33
dBm
Two-Tone Input Third-Order Intercept1
F = 28 GHz
IIP3
45
dBm
Electrical Specifications at 25°C
1. Not measured on a 100% basis.
2. Typical represents the median parameter valve across the specified
frequency range for the median chip.
0.000
2.995
2.146
0.845
0.000
0.411
0.636
1.365
2.094
0.411
2.319
2.730
Dimensions indicated in mm.
All RF pads are 0.07 x 0.150 mm. All DC pads are 0.1 x 0.1 mm.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +125°C
Storage Temperature (TST)
-65°C to +150°C
DC Reverse Bias
-70 V (-10
A)
DC Forward Bias
1.3 V (50 mA)
PIN
10 W
Absolute Maximum Ratings
Preliminary
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