參數(shù)資料
型號: AP028R2-00
元件分類: 開關(guān)
英文描述: 23000 MHz - 30000 MHz RF/MICROWAVE TRANSFER SWITCH, 1.9 dB INSERTION LOSS
封裝: CHIP
文件頁數(shù): 1/2頁
文件大小: 56K
代理商: AP028R2-00
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 2/01A
23–30 GHz GaAs MMIC
4 Port Reflective PIN Switch
Features
s Low Loss
s Excellent Return Loss
s Fast Switching Speed
s High Power Handling
Chip Outline
AP028R2-00
Description
Alpha’s 4 port PIN diode switch is a robust, high
performance switch. It is ideal for low loss, high isolation
applications, particularly where high power handling is
required. The chip uses Alpha’s proven PIN diode
technology, and is based upon MBE layers for the highest
uniformity and repeatability. The diodes employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate an epoxy die attach process. The
GaAs MMIC employs a shunt PIN diode in each arm and
an on-chip bias network. Chips are measured on a 100%
basis for DC diode breakdown voltage, turn-on voltage and
RF parameters on selected paths.
Parameter
Condition
Symbol
Min.
Typ.
Max.
Unit
Insertion Loss
F = 23–30 GHz
IL
1.3
1.9
dB
Isolation
F = 23–30 GHz
Iso
30
34
dB
Input Return Loss
F = 23–30 GHz
RLI
12
15
dB
Output Return Loss
F = 23–30 GHz
RLO
12
15
dB
Breakdown Voltage
IR = 10 AVBR
20
60
V
Forward Voltage
IF = 10 mA
VF
0.9
1.25
1.3
V
Switching Speed1
2ns
Output Power at 1 dB Compression1
F = 23–30 GHz
P1 dB
33
dBm
Electrical Specifications at 25°C
1. Not measured on a 100% basis.
0.000
0.136
2.180
2.042
0.000
2.995
2.340
0.655
0.085
2.910
Dimensions indicated in mm.
All RF pads are 0.07 x 0.150 mm. All DC pads are 0.1 x 0.1 mm.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +125°C
Storage Temperature (TST)
-65°C to +150°C
DC Reverse Bias
-70 V (-10
A)
DC Forward Bias
1.3 V (50 mA)
PIN
10 W
Absolute Maximum Ratings
Preliminary
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