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參數(shù)資料
| 型號： | AOU456 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 74K |
| 代理商： | AOU456 |
AOU456
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
25
V
0.01
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
1.74
100
5.5
8
8.5
45
0.74
7
T
J
=125°C
10
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
50
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1850
472
275
0.86
2220
pF
pF
pF
1.2
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
31.7
15.7
5.8
8.2
7.5
14
30
11.5
30.9
20.3
38
19
nC
nC
nC
nC
ns
ns
ns
ns
37
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
μ
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=12.5V,
R
L
=0.625
, R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
Total Gate Charge
V
GS
=10V, V
DS
=12.5V, I
D
=20A
Gate Source Charge
Gate Drain Charge
m
Forward Transconductance
Diode Forward Voltage
Static Drain-Source On-Resistance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
R
DS(ON)
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
,
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
I
D
=250uA, V
GS
=0V
I
F
=20A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=12.5V, f=1MHz
A: The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires. Rev1: August 2005
Alpha & Omega Semiconductor, Ltd.
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