參數(shù)資料
型號(hào)： AOT430
廠商： ALPHA
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 83K
代理商： AOT430
AOT430
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
75
V
1
5
1
4
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
uA
V
A
2
2.7
200
9.8
16.0
90
0.7
11.5
19.0
T
J
=125°C
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Transconductance
Diode Forward Voltage
S
V
A
1
80
C
iss
47
00
p
F
C
oss
C
rss
180 p
F
R
g
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
400
pF
3
Q
g
(10V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
114
33
18
21
39
70
24
53
143
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=100A/
μ
s
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=30V, R
L
=1
,
R
GEN
=3
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
GS
=10V, V
DS
=30V, I
D
=30A
m
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=80A
Static Drain-Source On-Resistance
R
DS(ON)
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
,
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
I
D
=250uA, V
GS
=0V
I
F
=30A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=30V, f=1MHz
A: The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
Rev
2
:
Feb
200
7
Alpha & Omega Semiconductor, Ltd.
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