參數(shù)資料
型號: AOP802L
廠商: ALPHA
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙N溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 115K
代理商: AOP802L
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
30
66
25
Max
40
85
35
R
θ
JL
W
Junction and Storage Temperature Range
A
P
D
°C
3.1
2
-55 to 150
T
A
=70°C
I
D
Continuous Drain
Current
A
Pulsed Drain Current
B
Maximum
60
±20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
7.9
6.3
40
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AOP802
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 7.9A (V
GS
= 10V)
R
DS(ON)
< 25m
(V
GS
= 10V)
R
DS(ON)
< 30m
(V
GS
= 4.5V)
General Description
The AOP802 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AOP802 is Pb-free
(meets ROHS & Sony 259 specifications). AOP802L
is a Green Product ordering option. AOP802 and
AOP802L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
PDIP-8
Alpha & Omega Semiconductor, Ltd.
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