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參數資料
| 型號： | AOP610L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強模式互補場效應晶體管 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 144K |
| 代理商： | AOP610L |
AOP610
N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
10
15
20
25
30
35
40
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode characteristics
I
S
125°C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
0
25
50
75
100
125
150
175
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
=10V
I
D
=7.7A
V
GS
=4.5V
I
D
=4A
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=7.7A
125°C
25°C
25°C
5V
Alpha & Omega Semiconductor, Ltd.
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