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參數(shù)資料
| 型號： | AOP610 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 144K |
| 代理商： | AOP610 |
Symbol
V
DS
V
GS
Max p-channel
-30
±20
-6.2
Units
V
V
I
DM
I
AR
E
AR
T
J
, T
STG
A
mJ
°C
Symbol
Typ
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
45
78
30
38.5
78
28
55
95
40
55
95
40
R
θ
JL
R
θ
JL
Thermal Characteristics: n-channel+schottky and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
-55 to 150
-55 to 150
20
Avalanche Current
B
Repetitive avalanche energy 0.1mH
B
Junction and Storage Temperature Range
15
11
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
A
Steady-State
t
≤
10s
t
≤
10s
Steady-State
R
θ
JA
30
±20
7.7
6.1
30
2.3
1.45
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Max
20
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
-4.9
-30
2.3
1.45
A
T
A
=25°C
T
A
=70°C
I
D
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
T
A
=70°C
Power Dissipation
T
A
=25°C
P
D
G2
S1
S2/A
G1
D2/K
D1
D1
D2/K
1
2
3
4
8
7
6
5
N-ch
P-ch
PDIP-8
AOP610
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.7A (V
GS
=10V) -6.2A (V
GS
=10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS
=10V) < 37m
(V
GS
= -10V)
< 42m
(V
GS
=4.5V) < 60m
(V
GS
= -4.5V)
ESD rating: 1500V (HBM)
General Description
The AOP610 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications. A
Schottky diode in parallel with the n-channel
FET reduces body diode related losses. It is
ESD protected.
Standard product AOP610 is
Pb-free (meets ROHS & Sony 259
specifications). AOP610L is a Green Product
ordering option. AOP610 and AOP610L are
electrically identical.
n-channel
p-channel
G2
D2
S2
G1
D1
S1
K2
A2
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOP610L | Complementary Enhancement Mode Field Effect Transistor |
| AOP800 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AOP800L | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AOP802 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AOP802L | Dual N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOP610L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP611 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP611L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ISA BUS KARTE 8KANAL D/A WANDLER 12BIT |
| AOP800 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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