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參數(shù)資料
| 型號(hào)： | AOP605_06 |
| 廠商： | ALPHA |
| 英文描述： | Plastic Encapsulated Device |
| 中文描述： | 塑料封裝器件 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 113K |
| 代理商： | AOP605_06 |
2
This AOS product reliability report summarizes the qualification result for AOP605. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOP605passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
Package and Die information
III.
Environmental Stress Test Summary and Result
IV.
Reliability Evaluation
V.
Quality Assurance Information
I. Product Description:
The AOP605 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of
applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications).
AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V
DS
Max p-channel
-30
Units
V
30
Gate-Source Voltage
V
GS
±20
±20
V
T
A
=25°C
7.5
-6.6
Continuous
Drain Current
T
A
=70°C
I
D
6
-5.3
Pulsed Drain Current
I
DM
P
D
30
-30
A
T
A
=25°C
2.5
2.5
Power
Dissipation
T
A
=70°C
1.6
1.6
W
Junction and Storage
Temperature Range
Thermal Characteristics : n-channel, Schottky and p-channel
T
J
, T
STG
-55 to 150
-55 to 150
°C
Parameter
Symbol
Device
Typ
Max
Units
Maximum Junction-
to-Ambient
Maximum Junction-
to-Ambient
Maximum Junction-
to-Lead
Maximum Junction-
to-Ambient
Maximum Junction-
to-Ambient
Maximum Junction-
to-Lead
t
≤
10s
n-ch
40
50
Steady-
State
Steady-
State
R
θ
JA
n-ch
67
80
R
θ
JL
n-ch
33
40
t
≤
10s
p-ch
38
50
Steady-
State
Steady-
State
R
θ
JA
p-ch
66
80
R
θ
JL
p-ch
30
40
°C/W
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PDF描述 |
|---|---|
| AOP605L | Plastic Encapsulated Device |
| AOP606 | Complementary Enhancement Mode Field Effect Transistor |
| AOP606L | Complementary Enhancement Mode Field Effect Transistor |
| AOP607 | Complementary Enhancement Mode Field Effect Transistor |
| AOP607L | Complementary Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOP605L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
| AOP606 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP606L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP607 | 功能描述:MOSFET N/P-CH COMPL 60V 8-PDIP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AOP607L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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