參數(shù)資料
型號(hào)： AOP601L
廠商： ALPHA
英文描述： Complementary Enhancement Mode Field Effect Transistor
中文描述： 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 153K
代理商： AOP601L
AOP601
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
1.8
30
22.6
28
T
J
=125°C
33
16
43
m
g
FS
12
S
V
I
S
DYNAMIC PARAMETERS
Input Capacitance
4
A
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
680
102
77
3
pF
pF
pF
Q
g
(10V)
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.45
0.007
0.5
0.05
V
3.2
12
37
10
20
C
T
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
I
F
=7.5A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=7.5A
Output Capacitance. (Schottky+FET)
Reverse Transfer Capacitance
Gate resistance
Maximum Body-Diode+Schottky Continuous Current
I
DSS
Zero Gate Voltage Drain Current
n-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
μ
A
m
V
GS
=4.5V, I
D
=6.0A
V
DS
=5V, I
D
=7.5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
SD
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
V
GS
=4.5V, V
DS
=15V, I
D
=7.5A
V
GS
=10V, V
DS
=15V, R
L
=2.0
,
R
GEN
=6
Schottky+ Body Diode Forward Voltage I
S
=1A
V
GS
=0V, V
DS
=0V, f=1MHz
mA
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
V
R
=15V
I
F
=1.0A
V
R
=30V
0.45
0.5
V
GS
=0V, V
DS
=15V, f=1MHz
I
F
=7.5A, dI/dt=100A/
μ
s
Junction Capacitance
I
rm
Maximum reverse leakage current
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
Rev 3: Sept 2005
相關(guān)PDF資料
PDF描述
AOP605 Plastic Encapsulated Device
AOP605_06 Plastic Encapsulated Device
AOP605L Plastic Encapsulated Device
AOP606 Complementary Enhancement Mode Field Effect Transistor
AOP606L Complementary Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AOP604 制造商:OPTEK 制造商全稱:OPTEK 功能描述:Complementary Enhancement Mode Field Effect Transistor
AOP605 功能描述:MOSFET N/P-CH COMPL 30V 8-PDIP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AOP605_06 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device
AOP605_09 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AOP605L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*