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參數(shù)資料
| 型號： | AOP601L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強模式互補場效應晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 153K |
| 代理商： | AOP601L |
AOP601
Symbol
Typ
40
67
33
Max
50
80
40
R
θ
JL
Symbol
Typ
38
66
30
Max
50
80
40
R
θ
JL
Symbol
Typ
42
70
34
Max
50
80
40
R
θ
JL
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient
A
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Units
t
≤
10s
R
θ
JA
Units
°C/W
°C/W
°C/W
t
≤
10s
Steady-State
Steady-State
R
θ
JA
Steady-State
Steady-State
°C/W
°C/W
Thermal Characteristics: Schottky
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Units
°C/W
t
≤
10s
R
θ
JA
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 3: Sept 2005
Alpha Omega Semiconductor, Ltd.
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