參數(shù)資料
型號: AOD496
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應管
文件頁數(shù): 1/5頁
文件大小: 125K
代理商: AOD496
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
15
41
2
Max
20
50
2.4
R
θ
JC
A
Repetitive avalanche energy L=0.3mH
C
135
62.5
31
2.5
1.6
mJ
Maximum Junction-to-Case
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±20
62
44
120
30
Pulsed Drain Current
Avalanche Current
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
Gate-Source Voltage
Continuous Drain
Current
B
Drain-Source Voltage
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
DSM
Maximum
30
Units
T
C
=25°C
T
C
=100°C
W
A
P
D
°C
-55 to 175
I
D
W
AOD496
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 62A (V
GS
= 10V)
R
DS(ON)
< 9.5m
(V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 4.5V)
General Description
The AOD496 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
Standard Product
AOD496 is Pb-free (meets ROHS & Sony 259
specifications). AOD496L is a Green Product ordering
option. AOD496 and AOD496L are electrically
identical.
D
S
G
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
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相關代理商/技術參數(shù)
參數(shù)描述
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