參數(shù)資料
型號(hào): AOD458
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 128K
代理商: AOD458
193
18
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
15
44
1.8
Max
20
55
3
R
θ
JC
T
A
=70°C
1.9
Power Dissipation
A
T
A
=25°C
P
DSM
2.7
330
50
25
A
mJ
W
Junction and Storage Temperature Range
A
P
D
°C
-55 to 175
T
C
=100°C
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
C
45
I
D
85
60
200
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
T
C
=25°C
G
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±12
Gate-Source Voltage
Drain-Source Voltage
30
Maximum
Units
t
10s
Steady-State
Steady-State
R
θ
JA
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
AOD458
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4m
(V
GS
= 10V)
R
DS(ON)
< 5m
(V
GS
= 4.5V)
General Description
The AOD458 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product
AOD458 is Pb-free (meets ROHS & Sony
259 specifications). AOD458L is a Green Product
ordering option. AOD458 and AOD458L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
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