參數(shù)資料
型號: AOD464
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應管
文件頁數(shù): 1/5頁
文件大小: 125K
代理商: AOD464
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
15
45
1
Max
18
55
1.5
R
θ
JC
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
W
T
A
=70°C
1.5
Junction and Storage Temperature Range
-55 to 175
°C
Power Dissipation
A
T
A
=25°C
P
DSM
2.3
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
20
200
100
50
A
mJ
A
T
C
=100°C
28
80
Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C
I
D
40
Drain-Source Voltage
Gate-Source Voltage
105
±25
V
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Maximum
Units
R
θ
JA
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
W
AOD464
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 105V
I
D
= 40 A (V
GS
=10V)
R
DS(ON)
< 28 m
(V
GS
=10V) @ 20A
R
DS(ON)
< 31 m
(V
GS
= 6V)
General Description
The AOD464 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOD464 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD464L is a Green Product ordering option. AOD464
and AOD464L are electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
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