- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375337 > AOD403 (ALPHA) P-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AOD403 |
| 廠商： | ALPHA |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 155K |
| 代理商： | AOD403 |
AOD403
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-0.01
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3.5
nA
V
A
-1.5
-60
-2.6
5.1
7.1
6.3
44
-0.72
6
T
J
=125°C
8.5
7.6
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
-104
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
4360
1050
762
2.5
5300
pF
pF
pF
3
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
93.2
18
29.2
18
30
51
35
39.5
30.8
120
nC
nC
nC
ns
ns
ns
ns
25
45
75
50
48
37
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, R
L
=0.75
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-20A
m
V
GS
=-10V, I
D
=-20A
V
DS
=-5V, I
D
=-20A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-20V, I
D
=-20A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-20A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
I
F
=-20A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on steady-state R
θ
JA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev 4: Aug 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOD403L | P-Channel Enhancement Mode Field Effect Transistor |
| AOD404 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD404L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD406 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD406L | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD403_030 | 功能描述:MOSFET P-CH TO252 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類(lèi)型:P 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:15A（Ta），70A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:10V，20V 不同 Id 時(shí)的 Vgs（th）（最大值）:3.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:61nC @ 10V Vgs（最大值）:±25V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:3500pF @ 15V FET 功能:- 功率耗散（最大值）:2.5W（Ta），90W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:6.2 毫歐 @ 20A，20V 工作溫度:-55°C ~ 175°C（TJ） 安裝類(lèi)型:表面貼裝 供應(yīng)商器件封裝:TO-252 封裝/外殼:TO-252-3，DPak（2 引線 + 接片），SC-63 標(biāo)準(zhǔn)包裝:2,500 |
| AOD403_11 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AOD403_13 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AOD403_DELTA | 功能描述:MOSFET P-CH TO252 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類(lèi)型:P 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:15A（Ta），70A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:10V，20V 不同 Id 時(shí)的 Vgs（th）（最大值）:3.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:61nC @ 10V Vgs（最大值）:±25V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:3500pF @ 15V FET 功能:- 功率耗散（最大值）:2.5W（Ta），90W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:6.2 毫歐 @ 20A，20V 工作溫度:-55°C ~ 155°C（TJ） 安裝類(lèi)型:表面貼裝 供應(yīng)商器件封裝:TO-252，（D-Pak） 封裝/外殼:TO-252-3，DPak（2 引線 + 接片），SC-63 標(biāo)準(zhǔn)包裝:2,500 |
| AOD403L | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。