參數(shù)資料
型號: AOD403L
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強型場效應(yīng)晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 155K
代理商: AOD403L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
13
39
0.56
Max
20
50
1.5
R
θ
JL
A
Repetitive avalanche energy L=0.1mH
C
120
100
50
2.5
1.6
mJ
Maximum Junction-to-Case
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±25
-85
-65
-200
-30
Pulsed Drain Current
Avalanche Current
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
DSM
Maximum
-30
Units
T
A
=25°C
G
T
A
=100°C
B
W
A
P
D
°C
-55 to 175
I
D
W
AOD403
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -85A (V
GS
= -20V)
R
DS(ON)
< 6m
(V
GS
= -20V)
R
DS(ON)
< 7.6m
(V
GS
= -10V)
General Description
The AOD403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD403 is Pb-free (meets ROHS & Sony 259
specifications). AOD403L is a Green Product
ordering option. AOD403 and AOD403L are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
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