參數(shù)資料
型號(hào): AOD402L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 1/4頁
文件大?。?/td> 111K
代理商: AOD402L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
1.9
Max
25
50
2.5
R
θ
JC
W
T
A
=70°C
1.6
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
P
DSM
2.5
Repetitive avalanche energy L=0.1mH
C
40
60
30
A
mJ
A
P
D
°C
-55 to 175
T
C
=100°C
Avalanche Current
C
18
I
D
18
12
40
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum
30
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±25
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
10s
R
θ
JA
AOD402
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 18 A (V
GS
= 20V)
R
DS(ON)
< 15 m
(V
GS
= 20V)
R
DS(ON)
< 18 m
(V
GS
= 10V)
R
DS(ON)
< 44 m
(V
GS
= 4.5V)
General Description
The AOD402 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, laod
switching and general purpose applications.
Standard Product AOD402 is Pb-free (meets ROHS
& Sony 259 specifications). AOD402L is a Green
Product ordering option. AOD402 and AOD402L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AOD403 P-Channel Enhancement Mode Field Effect Transistor
AOD403L P-Channel Enhancement Mode Field Effect Transistor
AOD404 N-Channel Enhancement Mode Field Effect Transistor
AOD404L N-Channel Enhancement Mode Field Effect Transistor
AOD406 N-Channel Enhancement Mode Field Effect Transistor
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