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參數(shù)資料
| 型號： | AO9926B |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 125K |
| 代理商： | AO9926B |
AO9926B
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
100
nA
V
V
A
±12
0.5
30
0.8
1
18
25
21
27
38
24
0.7
23
30
26
34
52
T
J
=125°C
m
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
S
V
A
1
3.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
630
164
137
1.5
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
8.8
1
3.7
5.5
14
29
10.2
nC
nC
nC
ns
ns
ns
ns
15.2
6.3
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7.6A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=7.6A
Reverse Transfer Capacitance
Gate resistance
I
F
=7.6A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250uA
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
Gate-Body leakage current
Gate-Source Breakdown Voltage
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=2.5V, I
D
=6A
V
GS
=1.8V, I
D
=2A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=7.6A
V
GS
=4.5V, I
D
=7A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=5V, V
DS
=10V, R
L
=1.3
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=7.6A
Turn-On DelayTime
V
GS
=0V, V
DS
=10V, f=1MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The currentand power rating is based on the t
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 1: June 2005
≤
10s thermal
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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相關代理商/技術(shù)參數(shù) |
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| AO9926B_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual N-Channel MOSFET |
| AO9926BL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO9926BL_101 | 功能描述:MOSFET 2N-CH 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:2 個 N 溝道（雙） FET 功能:標準 漏源電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:7.6A 不同?Id，Vgs 時的?Rds On（最大值）:23 毫歐 @ 7.6A，10V 不同 Id 時的 Vgs（th）（最大值）:1.1V @ 250μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:12.5nC @ 10V 不同 Vds 時的輸入電容（Ciss）（最大值）:630pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商器件封裝:8-SOIC 標準包裝:3,000 |
| AO9926C | 功能描述:MOSFET 2N-CH 20V 7.6A 8SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO9926E | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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