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參數(shù)資料
| 型號： | AO8806 |
| 廠商： | ALPHA |
| 英文描述： | LJT 6C 6#12 SKT WALL RECP |
| 中文描述： | 常見的漏雙N溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 231K |
| 代理商： | AO8806 |
AO8806
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1
nA
V
A
0.4
30
0.6
19.3
27.6
24
30.5
23
0.76
25
35
30
40
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
15
S
V
A
1
2.5
C
iss
C
oss
C
rss
SWITCHING PARAMETERS
Total Gate Charge
940
157
133
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
15
1
4
6.5
9
56.5
13.2
nC
nC
nC
ns
ns
ns
ns
22.4
8.4
ns
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=6A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=6A
Reverse Transfer Capacitance
I
F
=6A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Gate Source Charge
Gate Drain Charge
m
V
GS
=2.5V, I
D
=5A
V
GS
=1.8V, I
D
=4A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=5A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=5V, V
DS
=10V, R
L
=1.8
,
R
GEN
=6
Input Capacitance
Output Capacitance
Turn-On DelayTime
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=6A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AO8806_07 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8807 | 功能描述:MOSFET 2P-CH 12V 6.5A 8TSSOP RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO8807L | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET P-CH 12V 6.5A 制造商:AOS 功能描述:MOSFET |
| AO8808 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8808A | 功能描述:MOSF 2N CH DL 20V 7.9A 8TSSOP RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:* 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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