參數(shù)資料
型號(hào): AO7401
廠商: ALPHA
英文描述: LJT 55C 55#22D SKT RECP
中文描述: 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁數(shù): 1/6頁
文件大小: 272K
代理商: AO7401
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
300
350
280
Max
360
425
320
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
±12
-1.2
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
-30
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-1.0
-10
0.35
0.22
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AO7401
P-Channel Enhancement Mode Field Effect Transistor
Nov 2002
Features
V
DS
(V) = -30V
I
D
= -1.2A
R
DS(ON)
< 150m
(V
GS
= -10V)
R
DS(ON)
< 200m
(V
GS
= -4.5V)
R
DS(ON)
< 280m
(V
GS
= -2.5V)
General Description
The AO7401 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 2.5V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
G
D
S
S
G
D
SC-70
(SOT-323)
Top View
Alpha & Omega Semiconductor, Ltd.
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