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參數(shù)資料
| 型號： | AO4916L |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 547K |
| 代理商： | AO4916L |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
110
40
Maximum Junction-to-Lead
C
Steady-State
32
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
47.5
62.5
°C/W
Steady-State
71
62.5
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
74
35
110
40
Steady-State
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
48
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
1.28
1.28
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
2
2
A
2
40
Pulsed Forward Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
MOSFET
30
±20
8.5
6.6
40
Schottky
Continuous Drain Current
A
B
Schottky reverse voltage
I
D
A
30
3
Continuous Forward Current
A
I
F
AO4916, AO4916L( Green Product )
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Rev 3: Nov 2004
Features
V
DS
(V) = 30V
I
D
= 8.5A
R
DS(ON)
< 17m
(V
GS
= 10V)
R
DS(ON)
< 27m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO4916 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. AO4916L
( Green Product ) is offered in a lead-free package.
SOIC-8
G1
S1/A
D2
D2
D1/S2/K
D1/S2/K
D1/S2/K
G2
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
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