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參數(shù)資料
| 型號(hào)： | AO4900L |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | AO4900L |
AO4900
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1.4
nA
V
A
0.7
25
1
22.6
33
27
42
27
40
32
50
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
12
16
0.71
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
846
96
67
1.24
1050
pF
pF
pF
3.6
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
9.6
1.65
3
3.2
4.1
26.3
3.7
15.5
7.9
12
nC
nC
nC
ns
ns
ns
ns
nC
4.8
6.2
40
5.5
20
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
I
F
=5A, dI/dt=100A/
μ
s
I
F
=5A, dI/dt=100A/
μ
s
0.45
0.007
0.5
0.05
V
3.2
12
37
10
20
C
T
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=6.9A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=4.5V, I
D
=6.0A
V
GS
=2.5V, I
D
=5A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
DS
=5V, I
D
=5A
I
S
=1A
V
GS
=0V, V
DS
=15V, f=1MHz
mA
V
GS
=4.5V, V
DS
=15V, I
D
=6.9A
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
I
rm
Maximum reverse leakage current
V
R
=30V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
V
R
=15V
Junction Capacitance
I
F
=1.0A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The SOA curve provides a single pulse rating.
Rev 3 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
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| AO4902 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4902L | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4904 | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4904L | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4906 | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4902 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4902L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4904 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4904L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4906 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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