參數(shù)資料
型號: AO4900AL
廠商: ALPHA
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述: 雙N溝道增強(qiáng)型場效應(yīng)晶體管肖特基二極管
文件頁數(shù): 5/5頁
文件大?。?/td> 124K
代理商: AO4900AL
AO4900A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
0
50
100
150
200
250
0
5
10
15
20
25
30
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
C
0.001
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
25
50
75
100
125
150
175
Temperature (°C)
V
F
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=1A
25°C
I
F
=3A
V
R
=30V
125°C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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