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參數(shù)資料
| 型號(hào)： | AO4900AL |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管肖特基二極管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | AO4900AL |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
Pulsed Drain Current
B
Schottky reverse voltage
Junction and Storage Temperature Range
2
W
30
3
2
40
1.44
1.44
Power Dissipation
Max
°C/W
°C/W
MOSFET
30
±12
6.9
5.8
40
2
I
F
40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
62.5
48
55
90
40
Continuous Drain Current
A
Gate-Source Voltage
Schottky
Drain-Source Voltage
Parameter
-55 to 150
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
P
D
I
D
A
Continuous Forward Current
A
Pulsed Forward Current
B
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
t
≤
10s
-55 to 150
Typ
Steady-State
110
Steady-State
62.5
t
≤
10s
R
θ
JA
Steady-State
110
Steady-State
71
32
47.5
R
θ
JA
AO4900A
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4900A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further.
Standard Product AO4900A is Pb-
free (meets ROHS & Sony 259 specifications).
AO4900AL is a Green Product ordering option.
AO4900A and AO4900AL are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27m
(V
GS
= 10V)
R
DS(ON)
< 32m
(V
GS
= 4.5V)
R
DS(ON)
< 50m
(V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
SOIC-8
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K
1
2
3
4
8
7
6
5
G2
D2
S2
K
A
G1
D1
S1
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4900 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4900L | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4902 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4902L | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4904 | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4900L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4902 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4902L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4904 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4904L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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