參數(shù)資料
型號(hào)： AO4826
廠商： ALPHA
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 114K
代理商： AO4826
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
50
73
31
Max
62.5
110
40
R
θ
JL
W
Junction and Storage Temperature Range
A
P
D
°C
2
1.28
-55 to 150
T
A
=70°C
I
D
Continuous Drain
Current
A
Pulsed Drain Current
B
Maximum
60
±20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
6.3
5
40
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
≤
10s
R
θ
JA
AO4826
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 6.3A (V
GS
= 10V)
R
DS(ON)
< 25m
(V
GS
= 10V)
R
DS(ON)
< 30m
(V
GS
= 4.5V)
General Description
The AO4826 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4826 is Pb-free
(meets ROHS & Sony 259 specifications). AO4826L
is a Green Product ordering option. AO4826 and
AO4826L are electrically identical.
G1
D1
S1
G2
D2
S2
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4826L Dual N-Channel Enhancement Mode Field Effect Transistor
AO4828 Dual N-Channel Enhancement Mode Field Effect Transistor
AO4828L Dual N-Channel Enhancement Mode Field Effect Transistor
AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO4832L Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4826_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:60V Dual N-Channel MOSFET
AO4826L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
AO4828 功能描述:MOSFET DUAL N-CH 60V 4.5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AO4828_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:60V Dual N-Channel MOSFET
AO4828L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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