參數(shù)資料
型號: AO4807
廠商: ALPHA
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙P溝道增強型場效應晶體管
文件頁數(shù): 1/4頁
文件大小: 114K
代理商: AO4807
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
48
74
35
Max
62.5
110
40
R
θ
JL
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Maximum
-30
Units
V
V
Gate-Source Voltage
Continuous Drain
Current
A
±20
-6
-5
-30
I
D
T
A
=25°C
T
A
=70°C
P
D
2
A
T
A
=70°C
Pulsed Drain Current
B
T
A
=25°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
°C/W
°C/W
W
1.44
Junction and Storage Temperature Range
-55 to 150
°C
Power Dissipation
A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AO4807
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -6 A (V
GS
= -10V)
R
DS(ON)
< 35m
(V
GS
= -10V)
R
DS(ON)
< 58m
(V
GS
= -4.5V)
General Description
The AO4807 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
Standard Product
AO4807 is Pb-free (meets ROHS & Sony 259
specifications). AO4807L is a Green Product ordering
option. AO4807 and AO4807L are electrically
identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
G2
D2
S2
相關(guān)PDF資料
PDF描述
AO4807L Dual P-Channel Enhancement Mode Field Effect Transistor
AO4812A Dual N-Channel Enhancement Mode Field Effect Transistor
AO4812 Dual N-Channel Enhancement Mode Field Effect Transistor
AO4812L Dual N-Channel Enhancement Mode Field Effect Transistor
AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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