參數(shù)資料
型號(hào)： AO4714
廠商： ALPHA
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 141K
代理商： AO4714
AO4714
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
V
DS
=30V, V
GS
=0V
0.1
20
0.1
2.2
T
J
=125°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
Gate Threshold Voltage
On state drain current
1.2
100
1.5
V
A
3.9
5.9
5.4
90
0.36
4.7
7.3
6.7
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
0.5
6
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
3760
682
314
0.75
4512
pF
pF
pF
1.5
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
62
29
12
12
9.5
8.5
34
9
18
22
74
35
nC
nC
nC
ns
ns
ns
ns
27
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=300A/
μ
s
Drain-Source Breakdown Voltage
I
D
=1mA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
Gate resistance
I
F
=20A, dI/dt=300A/
μ
s
V
DS
=V
GS
I
D
=250
μ
A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
mA
V
DS
=0V, V
GS
= ±20V
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
m
V
GS
=4.5V, I
D
=16A
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
Turn-On DelayTime
Total Gate Charge
Total Gate Charge
Gate Source Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t
≤
10s junction to ambient thermal resistance rating.
Rev1: Feb. 2007
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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