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參數(shù)資料
| 型號： | AO4704 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | N溝道增強模式場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 164K |
| 代理商： | AO4704 |
AO4704
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
12
10
20
100
2
I
GSS
V
GS(th)
I
D(ON)
nA
V
A
0.6
40
1.1
9.1
13.3
10.5
37
0.45
11.5
16.5
13
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Body Diode+Schottky Reverse Recovery Charge
30
S
V
A
0.5
5
3656
322
168
0.86
4050
pF
pF
pF
1.1
30.5
4.6
8.6
6.2
4.8
55
7.3
20.3
8.4
36
nC
nC
nC
ns
ns
ns
ns
9
7
75
11
25
12.5
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate resistance
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
I
F
=13A, dI/dt=100A/
μ
s
Body Diode+Schottky Reverse Recovery Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.1
,
R
GEN
=0
Total Gate Charge
Gate Source Charge
I
F
=13A, dI/dt=100A/
μ
s
On state drain current
Forward Transconductance
Diode + Schottky Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
I
S
=1A,V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, ID=13A
V
GS
=10V, V
DS
=15V, I
D
=13A
V
GS
=0V, V
DS
=0V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
mA
Gate Threshold Voltage
I
D
=250
μ
A, V
GS
=0V
V
R
=30V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Gate-Body leakage current
V
DS
=V
GS
I
D
=250
μ
A
V
DS
=0V, V
GS
= ±12V
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=4.5V, I
D
=12.2A
V
DS
=5V, I
D
=13A
Reverse Transfer Capacitance
Output Capacitance (FET+Schottky)
V
GS
=0V, V
DS
=15V, f=1MHz
Input Capacitance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve provides
a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev5: August 2005
.
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4704L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4705 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4705L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4706 | 功能描述:MOSFET N-CH 30V 16.5A 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:SRFET™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4706_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
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