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參數(shù)資料
| 型號： | AO4622 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 193K |
| 代理商： | AO4622 |
AO4622
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
2
nA
V
A
0.6
35
1.25
19
28
24
67
17
0.7
23
33.6
30
84
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
900
162
105
1.8
1100
pF
pF
pF
2.7
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
15
7.2
1.8
2.8
4.5
9.2
18.7
3.3
18
9.5
18
9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
N-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
uA
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±16V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=7.3A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=2.5V, I
D
=4.5A
V
DS
=5V, I
D
=7.3A
I
S
=1A
V
GS
=4.5V, I
D
=6.4A
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=10V, I
D
=6.5A
V
GS
=10V, V
DS
=10V, R
L
=1.4
,
R
GEN
=3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7.3A, dI/dt=100A/
μ
s
I
F
=7.3A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient. R
θ
JL
and
R
θ
JC
are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t
≤
10s thermal resistance rating.
Rev1:Nov. 2006
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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