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參數(shù)資料
| 型號(hào)： | AO4613 |
| 廠(chǎng)商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 185K |
| 代理商： | AO4613 |
AO4613
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
10
-3
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
-1
30
-1.7
V
A
28
39
45
12.5
-0.77
37
48
60
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
S
V
A
-1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
1040
179
134
5
1250
pF
pF
pF
10
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
16.8
8.7
3.4
5
9
5.7
22.7
10.2
21.7
13.6
22
12
nC
nC
nC
nC
ns
ns
ns
ns
12
11
30
20
27
18
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-6.1A
m
V
GS
=-4.5V, I
D
=-4A
V
DS
=-5V, I
D
=-6.1A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, I
D
=-6.1A
V
GS
=-10V, V
DS
=-15V, R
L
=2.5
,
R
GEN
=3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-6.1A, dI/dt=100A/
μ
s
I
F
=-6.1A, dI/dt=100A/
μ
s
θ
JA
2
A
θ
JA
θ
JL
μ
s pulses, duty cycle 0.5% max.
curve provides a single pulse rating.
provides a single pulse rating.
F. Rev 0: August 2005
≤
2
FR-4 boars pulses, duty cycle 0.5% max.
A
=25°C. The SOA
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s ther 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
θ
JL
and R
θ
JC
are equivalent terms referring to
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
E. These tests are performed with the device mounted on 1 in
Alpha & Omega Semiconductor, Ltd.
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參數(shù)描述 |
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| AO4613_001 | 功能描述:MOSFET N/P-CH 30V 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過(guò)期 FET 類(lèi)型:N 和 P 溝道 FET 功能:邏輯電平門(mén) 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:- 不同?Id，Vgs 時(shí)的?Rds On（最大值）:24 毫歐 @ 7.2A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:15nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:630pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4613_10 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:30V Dual P N-Channel MOSFET |
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| AO4614 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4614A | 功能描述:MOSFET N/P-CH COMPL 40V 8-SOIC RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類(lèi)型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱(chēng):SI7948DP-T1-GE3DKR |
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