- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375332 > AO4456 (ALPHA) N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AO4456 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 154K |
| 代理商： | AO4456 |
AO4456
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
V
DS
=24V, V
GS
=0V
0.008
9
0.1
20
0.1
2.4
T
J
=125°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
Gate Threshold Voltage
On state drain current
1.4
120
1.8
V
A
3.8
5.9
4.5
112
0.37
4.6
7.4
5.6
T
J
=125°C
m
g
FS
V
SD
I
S
5
Maximum Body-Diode
+ Schottky
Continuous Current
DYNAMIC PARAMETERS
S
V
A
0.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
6430
756
352
0.9
7716
pF
pF
pF
1.4
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
96
44
17
13
17.5
10
56
10.5
20
26
115
53
nC
nC
nC
ns
ns
ns
ns
25
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
V
GS
=0V, V
DS
=15V, f=1MHz
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
m
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
mA
V
DS
=0V, V
GS
= ±12V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=300A/
μ
s
I
D
=1mA, V
GS
=0V
I
F
=20A, dI/dt=300A/
μ
s
A: The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25°C. The power dissipation P
DSM
and current rating I
DSM
are
based on TJ(MAX)=150°C, using t
≤
10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R
θ
JA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev
1
:
June
2006
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4459 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4462 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4464 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4464L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4466 | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4458 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4459 | 功能描述:MOSFET P-CH -30V -6.5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4459_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4459L | 功能描述:MOSFET P-CH 30V 6.5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:6.5A（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:46 毫歐 @ 6.5A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:16nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:830pF @ 15V 功率 - 最大值:3.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4462 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。