參數(shù)資料
型號(hào): AO4444L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 115K
代理商: AO4444L
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
31
59
16
Max
40
75
24
R
θ
JL
W
Junction and Storage Temperature Range
A
P
D
°C
3
2.1
-55 to 150
T
A
=70°C
I
D
Continuous Drain
Current
A
Pulsed Drain Current
B
Maximum
30
±20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
20
17
80
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AO4444
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 20A (V
GS
= 10V)
R
DS(ON)
< 5.5m
(V
GS
= 10V)
R
DS(ON)
< 7.5m
(V
GS
= 4.5V)
General Description
The AO4444 uses advanced trench technology to
provide excellent R
DS(ON)
, body diode characteristics
and ultra-low gate resistance. This device is ideally
suited for use as a low side switch in 12V buck
converters.
Standard Product AO4444 is Pb-free
(meets ROHS & Sony 259 specifications). AO4444L
is a Green Product ordering option. AO4444 and
AO4444L are electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4446 N-Channel Enhancement Mode Field Effect Transistor
AO4446L N-Channel Enhancement Mode Field Effect Transistor
AO4447 P-Channel Enhancement Mode Field Effect Transistor
AO4447L P-Channel Enhancement Mode Field Effect Transistor
AO4449 P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
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