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參數(shù)資料
| 型號(hào)： | AO4437 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 164K |
| 代理商： | AO4437 |
AO4437
Symbol
Min
Typ
Max
Units
BVDSS
-12
V
-1
TJ=55°C
-5
±1
A
±10
A
VGS(th)
-0.3
-0.55
-1
ID(ON)
-20
A
12.4
16
TJ=125°C
17
21
15.9
20
m
20.4
25
m
gFS
38
S
VSD
-0.74
-1
V
IS
-4.5
A
Ciss
3960
4750
pF
Coss
910
pF
Crss
757
pF
Rg
6.9
8.5
Qg
37
47
nC
Qgs
4.5
nC
Qgd
11
nC
tD(on)
15
ns
tr
43
ns
tD(off)
158
ns
tf
95
ns
trr
64
ns
Qrr
50
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Gate-Body leakage current
Gate resistance
VGS=0V, VDS=0V, f=1MHz
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On Delay Time
DYNAMIC PARAMETERS
IF=-11A, dI/dt=100A/s
VGS=0V, VDS=-6V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-6V, ID=-11A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off Delay Time
VGS=-4.5V, VDS=-6V, RL=0.55,
RGEN=3
m
VGS=-2.5V, ID=-10A
IS=-1A,VGS=0V
VDS=-5V, ID=-11A
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=-250A
VDS=-9.6V, VGS=0V
VDS=0V, VGS=±8V
Zero Gate Voltage Drain Current
VDS=0V, VGS=±4.5V
IGSS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID=-250A, VGS=0V
VGS=-1.8V, ID=-6A
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-11A
Reverse Transfer Capacitance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev3: Nov. 2010
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4437_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:12V P-Channel MOSFET |
| AO4437L | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4438 | 功能描述:MOSFET N-CH 60V 8.2A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4438_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:60V N-Channel MOSFET |
| AO4438_101 | 功能描述:MOSFET N-CHANNEL 60V 8.2A 8SO 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:8.2A（Ta） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:30nC @ 4.5V Vgs（最大值）:±20V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:2300pF @ 30V FET 功能:- 功率耗散（最大值）:3.1W（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:22 毫歐 @ 8.2A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:8-SO 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 標(biāo)準(zhǔn)包裝:3,000 |
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