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參數(shù)資料
| 型號： | AO4912 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOIC-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 508K |
| 代理商： | AO4912 |
Symbol
Max Q2
Units
VDS
V
VGS
V
IDM
IAR
A
EAR
mJ
TJ, TSTG
°C
Symbol
VDS
IFM
TJ, TSTG
Junction and Storage Temperature Range
Power Dissipation
A
W
1.28
-55 to 150
°C
2
Pulsed Diode Forward Current
B
Continuous Forward
Current
AF
PD
IF
TA=25°C
TA=70°C
30
V
TA=25°C
Parameter
Reverse Voltage
A
2.2
20
3
TA=70°C
Maximum Schottky
Max Q1
30
±20
8.5
17
43
15
34
Units
TA=25°C
TA=70°C
Power Dissipation
PD
Pulsed Drain Current
B
Continuous Drain
Current
AF
ID
-55 to 150
Junction and Storage Temperature Range
2
1.28
TA=25°C
TA=70°C
2
Avalanche Current
B
±12
30
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Repetitive avalanche energy 0.3mH
B
Gate-Source Voltage
W
A
6.4
40
30
7
6.8
AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1
Q2
VDS (V) = 30V
VDS(V) = 30V
ID = 8.5A
ID=7A
(VGS = 10V)
RDS(ON) < 17m
<26m
(VGS = 10V)
RDS(ON) < 25m
<31m
(VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
General Description
The AO4912 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency
further. Standard Product AO4912 is Pb-free (meets
ROHS & Sony 259 specifications).
SOIC-8
G1
S1/A
D2
D1/S2/K
G2
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4912L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4914 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4914_101 | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個(gè) N 溝道（雙） FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:8A 不同?Id，Vgs 時(shí)的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4914_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET with Schottky Diode |
| AO4914A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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