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參數(shù)資料
| 型號(hào)： | AO3701 |
| 廠商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | P通道增強(qiáng)模式場(chǎng)的肖特基二極管晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 131K |
| 代理商： | AO3701 |
AO3701
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
-5
±1
±10
-1.4
T
J
=55°C
μ
A
μ
A
V
GS(th)
I
D(ON)
-0.6
-10
-0.9
V
A
65
91
82
117
6.8
-0.8
80
110
100
145
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
S
V
A
-0.65
-0.95
-2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
512
77
62
9.2
620
pF
pF
pF
13
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
5.5
0.8
1.9
5
6.7
28
13.5
9.8
2.7
6.6
nC
nC
nC
ns
ns
ns
ns
12
ns
nC
0.39
0.45
0.1
V
20
C
T
t
rr
Q
rr
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev1: May 2006
34
5.2
0.8
pF
10
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
I
F
=1A, dI/dt=100A/
μ
s
I
F
=1A, dI/dt=100A/
μ
s
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-16V, V
GS
=0V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
μΑ
V
DS
=0V, V
GS
=±10V
V
DS
=0V, V
GS
=±12V
I
D
=-250
μ
A, V
GS
=0V
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-3A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=-4.5V, I
D
=-2A
V
GS
=-2.5V, I
D
=-1A
V
DS
=-5V, I
D
=-3A
I
S
=-1A,V
GS
=0V
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3A
V
GS
=-10V, V
DS
=-10V, R
L
=2.8
,
R
GEN
=3
Junction Capacitance
V
R
=10V
I
F
=0.5A
V
R
=16V
V
R
=16V, T
J
=125°C
Maximum reverse leakage current
I
GSS
Gate-Body leakage current
mA
I
rm
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3A, dI/dt=100A/
μ
s
I
F
=-3A, dI/dt=100A/
μ
s
Alpha & Omega Semiconductor, Ltd.
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